An Analytical Study of 6H-SiC Schottky Barrier Diode (SBD) using Complementary Error Function profile for Breakdown Voltages and Depletion Region Width

Abstract

Silicon carbide is a wide band gap semiconductor material for high temperature, high-power and high-frequency device applications.The fact that wide band gap semiconductors are capable of electronic functionality at much higher temperatures than silicon. Because of its wide band gap, the leakage current of SiC is many orders of magnitude lower than that of silicon. There are number of possible crystal structure. These are 2H, 3C, 4H and 6H; but the most important are 3C, 4H and 6H.These structures differ by band gap energy, carrier mobility and breakdown field. Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Schottky barrier diodes (SBDs) have many benefits compared to other rectifying devices, such as fast switching speeds and relatively easy fabrication. The present work aims at the design of high breakdown voltage 7 kV 6H-SiC Schottky barrier diode with complementary error function doping profile in drift region .Firstly, the device equation for calculating breakdown voltages (Punch through and Avalanche both) is derived. After that the drift region depletion width is calculated at doping concentration Nd = 1*1015 /cm3 for different breakdown voltages from 1 to 10 kV