Study and Analysis of 3C-SiC DIMOSFET with Gaussian Profile in the Drift Region for High Breakdown Voltage

Abstract

Silicon carbide (SiC) possesses electrical and mechanical properties that make it a very promising semiconductor superior to silicon for high environments and high power applications. SiC is a potential semiconductor for high temperature, high frequency and high power electronic devices due of its wide band gap, highly saturated electron velocity, high breakdown electric field and high thermal conductivity. The fact that wide band gap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fuelled their development, particularly in the case of SiC. 3C-SiC is a potentially useful material for high temperature devices because of its refractory nature, high thermal conductivity, wide band gap (2.2eV) and high electron mobility comparable to that of Si. The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian function doping profile in drift region for high breakdown voltages. By varying the device height h, function constant m and peak concentration N0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration N0=1016 cm-3 at drain end and m as 1.496 x 10-2cm, highest breakdown voltage of 6.84kV has been estimated with device height of 200μm. However, substantial deviation found to exist between the punch through and avalanche breakdown voltages for each of three Gaussian profile that have been used.