Low Voltage Power dissipation Analysis of 6H-SiC DIMOSFET with Gaussian Profile in Drift region

Abstract

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 οC without external cooling could greatly benefit a variety of important applications, especially in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC.with a wider band gap of 6H-SiC of 3.0 electron volt a saturated drift velocity of 2x10 7cm/sec,a higher critical field for breakdown of 4x106V/cm with a dielectric constant of 9.7,and thermal conductivity of 4.9 W/cm °K it has almost all the qualities for becoming a better candidate than silicon or even 3C-SiC as a basic material. However, practical operation of silicon power devices at ambient temperature above 200 οC appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. The present work aims at analyzing power dissipation levels of the 6H-SiC DIMOSFET in the low voltage or linear region the drain characterstics.results of power dissipation using Gaussian profile with effective doping levels of 9.2x1016 or higher in the drift region show lower power dissipation levels than those obtained using uniformly doped drift regions with identical doping levels.it is seen that the Gaussian profiles yield lower power dissipation and somewhat higherbreakdown voltages than uniformly doped drift regions