Analysis of Depletion Region Width, Breakdown Voltages and Power Dissipation of Uniformly doped and Linearly Graded 3C-SiC Schottky Barrier Diode

Abstract

ABSTRACT Silicon carbide is a wide band gap semiconductor material so it is highly suitable for high temperature, high power and high-frequency device applications. Wide band gap semiconductors are capable of electronic functionality at much higher temperatures than silicon. The leakage current of SiC is many orders of magnitude lower than that of silicon due to its wide band gap. There are different crystal structures of SiC. These are 2H, 3C, 4H and 6H; but the most important are 3C, 4H and 6H. These structures differ by band gap, carrier mobility and breakdown electric field. SiC was originally produced by a high temperature electrochemical reaction of sand and carbon. Schottky barrier diodes (SBDs) have many benefits compared to other rectifying devices, for example fast switching speeds and relatively easy fabrication. The present work aims at the design of SiC Schottky Barrier diode with high breakdown voltage and lower power dissipation and study the effect of power dissipation, critical electric field, breakdown voltage, specific on resistance for uniformly doping profile and linearly graded drift region. At the different value of current density Jon. By using linearly graded drift region, it is possible to design thinner devices with higher breakdown voltages and low Power dissipation.