Theoretical Analysis of Breakdown Voltages and Depletion Region Width of 3C-SiC Double Implanted MOSFET Using Complementary Error Function Profile

Abstract

It is increasingly recognized that semiconductor based electronics that can function at temperatures higher than 15000C without external cooling cold greatly benefit a variety of important applications, especially in the automotive, aerospace, and energy production industries The fact that wide band gap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fuelled their development, particularly in the case of SiC. 3C-SiC is a potentially useful material for high temperature devices because of its refractory nature, high thermal conductivity, wide band gap(2.2eV) and high electron mobility comparable to that of Si. The present work aims at the design of high breakdown voltage 10kV 3C-SiC Vertical Double Implanted Metal-Oxide Semiconductor Field-Effect Transistor (DIMOSFET) with complementary error function doping profile in drift region. Firstly, the device equation for calculating breakdown voltage is derived. After that the Drift region depletion width is calculated at doping concentration Nd=1×1015/cm3 for different breakdown voltages from 1 to 10kv.