Design of Fully Self Bias Continuous Time CMOS Bandpass Gm-C Filter

dc.contributor.authorBanga, Vaibhav
dc.contributor.supervisorAgarwal, Alpana
dc.date.accessioned2009-08-17T11:07:38Z
dc.date.available2009-08-17T11:07:38Z
dc.date.issued2009-08-17T11:07:38Z
dc.descriptionDepartment of Electronics & Communication Engineeringen
dc.description.abstractThe present work addresses the design of fully self biased continuous-time CMOS bandpass Gm-C filter using a design methodology based on the g_m/I_D transistor characteristics. This analog module was analyzed, designed and prototyped in TSMS 0.35μm CMOS technology. Experimental results are presented, in order to validate the methodology. The filter has a pass-band central frequency of about 5.011MHz, quality factor of 19.28, Gain of 23.48 dB at center frequency and a current consumption of 288.48 μA. The circuit does not have need of any DC external biasing circuit, only need to apply VDD (3.3 V). Here self biasing has been introduced with power consumption of 952μW. The results have been taken with load variations, temperature variations, power supply variations and process corner variations, LVS and PEX have been generated from the layout. This circuit used in real time high frequency applications as in RF communication.en
dc.description.sponsorshipDepartment of Information Technology (Govt. of India) through SMDP-VLSI Project (Phase – II)en
dc.format.extent2446249 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/10266/881
dc.language.isoenen
dc.subjectBand Pass Filteren
dc.subjectGm-Cen
dc.subjectGm/IDen
dc.subjectSelf biaseden
dc.subjectContinuous Timeen
dc.titleDesign of Fully Self Bias Continuous Time CMOS Bandpass Gm-C Filteren
dc.typeThesisen

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