The Effect of Intercalation Doping on the Performance of Multi-Layer Graphene Nano Ribbons as VLSI Interconnects for Deep-Submicron technology nodes
Loading...
Files
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Performance of deep micron and sub-micron circuits is deeply impacted by the interconnect
due to reduced pitch size. With the reduction of technology below 45nm, the resistivity of
copper increases drastically. The surface grain boundary scattering and electro-migration
problem causes serious degradation in performance of copper as interconnect material.
With the invention of graphene, GNR’s are the major contenders of replacing copper as a
VLSI interconnect. In this dissertation, the applicability of MLGNR as interconnect material
is studied. With the advantage of relatively easy manufacturing of GNR’s when compared
with copper and retaining high mean free path and thermal stability makes it a dominant
contender for interconnect material. The impact of Fermi energy on the propagation delay
and power dissipation is studied. The increase in Fermi energy is the direct impact of
increasing doping in MLGNR interconnects. With the addition of suitable dopant atoms the
Fermi energy of GNR interconnects increases. This result in reduced parasitic components
involved with interconnects material. This decrease in RLC parameters directly causes
reduce delay and power dissipation of MLGNR interconnects. The results obtained by
varying Fermi energy of MLGNR are also compared with copper interconnects. The obtained
results shows improvement in performance of graphene ribbons with increased doping
The variation of delay and power dissipation of MLGNR is also discussed by varying the
technology node. A suitable number of repeaters are inserted to obtain the performance
analysis of GNR interconnects .As the scaling continues, the delay as well as power of
MLGNR increases. The performance variation between copper and MLGNR interconnect is
observed at higher global interconnect lengths. Thus MLGNR with suitable Fermi energy has
a potential to replace copper at global interconnect lengths.
Description
Master of Technology-VLSI Design
