Analysis of Breakdown Voltages and Depletion Region Width of 4H-SiC Vertical Double Implanted MOSFET with Gaussian Profile in Drift Region

Abstract

The semiconductor based electronic devices that can function at ambient temperatures higher than 1500C without external cooling system could greatly benefit a variety of application. When Silicon Power device work at a temperature above 2000C then it is problematic because of the self heating is increased, also the internal junction temperature and leakage increased. To work in high temperature with ease it is required to used high band gap devices. For all of these requirements Silicon devices are the optimum choices. Due to various properties of Silicon carbide like lower intrinsic carrier concentration (10–35 orders of magnitude), higher electric breakdown field (4–20 times), higher thermal conductivity (3–13 times), larger saturated electron drift velocity (2–2.5 times) it replaces Si material very quickly in the semiconductor industry. The fact that wide band gap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. 4H-SiC is a potentially useful material for high temperature devices because of its refractory nature, high thermal conductivity, wide band gap (2.2 eV) and high electron mobility comparable to that of Si.

The present work aims at the design of high breakdown voltage 10kV 4H-SiC DIMOSFET with Gaussian profile in drift region to show its characteristics and various properties. In Gaussian doping profile it is found that the height of drift region h at 10 KV is 102 µm. At that particular point the avalanche breakdown voltage is about 9.063 KV. The calculation of Depletion region Width at different breakdown voltage and at different height is to be done and corresponding graph is shown.