Estimation of enhanced breakdown voltages in 3C-SiC schottky barrier diode using special Erfc distribution doping profiles

Abstract

Normal Schottky Barrier diodes have been designed using a uniform doping of the semiconductor material used. However, the breakdown voltage obtained can be improved using non-uniform doping profiles, namely, linear graded profiles. Gaussian and Complementary error function have also been used for this purpose. However, special complementary error function for doping profiles in the semiconductor with n=1 and n=3 have been utilized in the exponential powers and it has been estimated that using peak carrier concentration No = 10^16 /cm3 with complementary erfc distribution and n=3 can be utilized to design 3C-SiC Schottky Barrier diodes with breakdown voltages of 14.3 kV. These results have been represented in this work and a comparison between breakdown voltages obtained with No ranging from 10^14 /cm3 to 10^16/cm3 with variation in n from 1 to 3.