An Analytical Study of Ru/3C-SiC Schottky Barrier Diode for Low Power Dissipation Using Linearly Graded Doping Profile

Abstract

It is increasingly recognized that semiconductor based electronics that can function at temperatures higher than 1500C without external cooling could greatly benefit a variety of important applications, especially in the automotive, aerospace, and energy production industries The fact that wide band gap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. 3C-SiC is a potentially useful material for high temperature devices because of its refractory nature, high thermal conductivity, wide band gap (2.2 eV) and high electron mobility comparable to that of Si. The present work aims at the design of a 5kV high power Ru/3C-SiC Schottky Barrier Diode with Uniform and Linearly Graded Doping profile. In both the profiles the Drift region width and specific on resistance is calculated and found to be less in case of Graded Doping Profile. Due to the less drift region width and on resistance the power dissipation in the case of Linearly Graded Doping Profile is less. Lastly a comparative study of Uniform and Linearly Graded profiles is done. For both the profiles power dissipation is calculated at the fixed current density 100 A/cm2 and the effective doping level is . The power improvement in Linearly Graded Doping profile is up to 30% higher than Uniform Doping profile and this improvements decrease with further increasing the effective doping level or increasing the gradient value.