Design of Low Power Low Noise Operational Amplifier

dc.contributor.authorKumar, Anilesh
dc.contributor.supervisorAgarwal, Alpana
dc.date.accessioned2009-09-02T12:50:56Z
dc.date.available2009-09-02T12:50:56Z
dc.date.issued2009-09-02T12:50:56Z
dc.descriptionM.Tech. (VLSI Design & CAD)en
dc.description.abstractIn the present work a Low Power Low Noise Operational Amplifier has been designed. PMOS input transistors and weak inversion topology is used for low power and low noise. PMOS transistors as an input stage driver transistor reduce the flicker noise and subthreshold operation reduces the power and noise both. This opamp is designed using TSMC 0.35 technology with a supply voltage of 3.3V. The value of the load capacitance is taken as 5 pF. The power dissipation of the op amp is 31.26 with bandwidth (f3dB) of 1.32 . Total Input Refereed Noise comes out to be 382.68 nV/rtHz at 1 Hz, 123.68 nV/rtHz at 10 Hz and 30.75 nV/rtHz at 1 KHz.en
dc.description.sponsorshipDepartment of Information Technology (Govt. of India) through SMDP-VLSI Project (Phase – II) and Department of Electronics and Communication Engineeringen
dc.format.extent3663093 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/10266/931
dc.language.isoenen
dc.subjectLow Poweren
dc.subjectLow Noiseen
dc.subjectOperational Amplifieren
dc.titleDesign of Low Power Low Noise Operational Amplifieren
dc.typeThesisen

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