Analysis of Punch-Through Breakdown Voltages in 3C-SiC Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafers

Abstract

Normally Schottky Barrier diodes are designed by using a uniform doping profile of the semiconductor material used. However, the higher breakdown voltage can be achieved by using non-uniform doping profiles, namely, linearly graded profile, Gaussian profile and Complementary error function profile. The present work aims at analyzing the punch through breakdown voltage of 3C-SiC Schottky Barrier diode using Gaussian profile. It is seen that Schottky barrier diode yield high punch through breakdown voltage with higher values of peak doping level and lower values of constant m. So, it is possible to design Schottky barrier diode with thinner wafers of 3C-SiC and higher breakdown voltage using Gaussian profile.