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|Solution-Processed CuSbS2 Thin Films for Solar Cell Application
|Mohanty, Bhaskar Chandra
|Thin film;Solution processing;Solar Cell;Absorber Layer
|Ternary CuSbS2 is an earth abundant and cost effective absorber material for solar cell application having optimum band gap value 1.52 eV and an absorption coefficient 104 Cm-1. Thin films were grown on glass substrate using simple and cost effective Chemical Bath Deposition method. Copper chloride dihydrate (CuCl2.2H2O), antimony trichloride (SbCl3) and thiourea (NH2.CS.NH2) were used as the ion sources of Cu, Sb and S respectively. Thin films were grown for 3 hour dip time and at room temperature. The effect of sulfurization temperature was studied. The properties of prepared thin films were investigated by XRD technique, Field emission scanning electron microscopy and UV-Visible spectrophotometer. The results indicated that prepared thin films sulfurized at 400 °C and 500 °C showed better crystallinity with a small amount of impurity as an unidentified phase.
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