Edge Truncated Planar Inverted F Antenna for High Band LTE Applications

Abstract

With recently higher growth in the use of mobile technology applications, the demand becomes higher in the use of voice and data services. It gives the motivation to the growth of the Long Term Evolution (LTE) and LTE advance. LTE advance is also known as 4G technique and it gives better mobile telle communication system as its performance is much better than older 3G system. In 4G many antenna can be used like advance dipole antenna, microstrip antenna, printed antenna and PIFA antenna etc. PIFA antenna prefers due to its various advantages over other one like its compact size, Low cost, light weight, and minimized backward radiation for minimizing SAR. At the same time, PIFA has some disadvantages also like bandwidth is narrow and low gain, due to its disadvantage it cannot be used in many applications. In this thesis a compact size edge truncated planar inverted F antenna for high band LTE applications (PIFA) is designed, simulated, fabricated and tested. The main aim of this thesis is designing of PIFA which works on LTE upper band. The structure of antenna should be compact so that it can be easily adjusted in small space, by this optimization of space can be achieved. The bandwidth should be broad and higher gain can be achieved over all bandwidth. The optimized dimension of the edge truncated planar inverted F antenna for high band LTE applications has been found by parametric studies. After optimum designing, the PIFA is simulated by CST software. The return loss, gain, VSWR results has also been showed in this thesis. Here, PIFA is also fabricated by using FR4 substrate. After fabrication PIFA is tested with the help of Agilent E5071C vector network analyzer. To enhance the gain another structure is designed and simulated. The simulated results have of gain enhanced structure also been showed. Also, the comparison between measured and simulated results of edge truncated planar inverted F antenna for high band LTE applications is shown.