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dc.contributor.supervisorMohanty, Bhaskar Chandra-
dc.contributor.authorBector, Keerti-
dc.descriptionMS, SPMSen
dc.description.abstractCu-doped PbS thin films were grown on glass substrates by a simple and expensive technique, namely the chemical bath deposition process (CBD) at a bath temperature of 60 C. Lead acetate, thiourea and copper chloride were used in aqueous solution as ion sources of Pb, S and Cu, respectively. All films were synthesized in a single step by dipping the substrates in the bath solution. The deposition time was varied from 2 to 30 min to investigate the evolution of the properties. The properties of resulting thin films were characterised by various techniques such as X- ray diffraction (XRD), field emission scanning electron microscope (FE- SEM) and UV-visible spectroscopy. It was found that for the undoped films, no deposition was possible up to a deposition time of 5 min. When the substrates were dipped for longer durations, the growth of the films proceeded from heterogeneous nucleation of crystallites followed by their coalescence. The films were found to be discontinuous for deposition times as long as 30 min. In contrast, the doped films showed a continuous film with surface covered by crystallites whose size and shape continuously decreased with the increase in Cu concentration. The continuous nature of the film is attributed to the formation of the initial layer of Cu7S4, as revealed from the XRD analysis, on which further growth of the films proceeded. For the undoped films, the transmittance remained relatively higher compared to the doped samples because of the discontinuous nature of the undoped films. However, with increase in deposition time, the transmittance decreased gradually due to the increased surface coverage of the glass substrates. For all the doped films, the transmittance gradually decreased with increasing deposition time due to higher absorption of incident photons. For small concentration of Cu up to 5%, the band gap marginally decreased and then, continuously increased from about 1.40 eV for 5% Cu doping to about 1.76 eV for 20% Cu-doping. Based on these results, it is believed that Cu-doped PbS thin films grown by the CBD process can be a potential candidate for PV applications.en
dc.format.extent3440570 bytes-
dc.subjectThin Filmsen
dc.titleEffects of Cu-Doping on PbS Thin Filmsen
Appears in Collections:Masters Theses@SPMS

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