Browsing by Author Chatterjee, A. K.

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Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
8-Nov-2010Analysis and Design of Robust Power Double Implanted Mosfet on 6H Silicon Carbide WafersChatterjee, A. K.; Vashishath, Munish
29-Sep-2016Analysis of 4H Silicon Carbide Double Implanted MOSFET using Complementary Error Function Doping Profile in Drift Region for increased Breakdown Voltage and Low Power DissipationChatterjee, A. K.; Sagar
19-Oct-2016Analysis of 4H Silicon Carbide Double Implanted MOSFET using Distorted Gaussian Doping Profile in Drift Region for Enhanced Breakdown Voltage and Low Power DissipationChatterjee, A. K.; Jose, Nickson P
16-Nov-2009Analysis of Breakdown Voltages and Depletion Region Width of 4H-SiC Vertical Double Implanted MOSFET with Gaussian Profile in Drift RegionChatterjee, A. K.; Sahu, Ashish Kumar
17-Sep-2009Analysis of Current and Breakdown Voltages in 3C-SiC Lateral Power MOSFETChatterjee, A. K.; Kumar, Vivek
1-Sep-2011Analysis of Depletion Region Width and Breakdown Voltages of 6H-SiC DIMOSFET Using Linearly Graded Profile in the Drift RegionChatterjee, A. K.; Sharma, Indra Mani
22-Aug-2014Analysis of Depletion Region Width, Breakdown Voltages and Power Dissipation of Uniformly doped and Linearly Graded 3C-SiC Schottky Barrier DiodeChatterjee, A. K.; Singh, Harvinder
10-Nov-2014Analysis of Punch-Through Breakdown Voltages in 3C-SiC Schottky Barrier Diode Using Gaussian Profile for 200┬Ám Thick WafersChatterjee, A. K.; Nishad, Pratibha
26-Sep-2008Analysis of the Power Dissipation of a Linearly Graded Profile in the Drift Region of a 6H-SiC DIMOSFETChatterjee, A. K.; Kumar, Vinit
16-Nov-2009An Analytical Study of 6H-SiC Schottky Barrier Diode (SBD) using Complementary Error Function profile for Breakdown Voltages and Depletion Region WidthChatterjee, A. K.; Verma, Chandrakant
10-Nov-2010An Analytical Study of High Power Schottky Barrier Diode on 4H Silicon Carbide (SiC) WafersChatterjee, A. K.; Talwar, Rajneesh
4-Sep-2008An Analytical Study of Ru/3C-SiC Schottky Barrier Diode for Low Power Dissipation Using Linearly Graded Doping ProfileChatterjee, A. K.; Rao, Divakar
1-May-2007Design of a 10kV, 6H-Silicon Carbide Power MOSFET with Low Power DissipationChatterjee, A. K.; Singh, Jaspal
6-Sep-2013Estimation of enhanced breakdown voltages in 3C-SiC schottky barrier diode using special Erfc distribution doping profilesChatterjee, A. K.; Priya
1-May-2007Low Voltage Power dissipation Analysis of 6H-SiC DIMOSFET with Gaussian Profile in Drift regionChatterjee, A. K.; Shweta Rani
21-Oct-2022Modeling of Leakage Currents in Double Gate MOSFETPrasad, B.; Chatterjee, A. K.; Agarwal, Alpana; Kushwaha, Madhu
7-Sep-2012Study and Analysis of 3C-SiC DIMOSFET with Gaussian Profile in the Drift Region for High Breakdown VoltageChatterjee, A. K.; Parashar, Parag
27-Aug-2010Study of 3C-SiC Lateral Double Diffusion MOSFET For Current Enhancement Based On Fixed Oxide Charge Inside SiO2 Layer.Chatterjee, A. K.; Bansal, Meenal
17-Sep-2009Theoretical Analysis of Breakdown Voltages and Depletion Region Width of 3C-SiC Double Implanted MOSFET Using Complementary Error Function ProfileChatterjee, A. K.; Rani, Preeti